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FDMS86201

Fairchild Semiconductor
Part Number FDMS86201
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Aug 8, 2013
Detailed Description FDMS86201 N-Channel Shielded Gate PowerTrench® MOSFET October 2014 FDMS86201 N-Channel Shielded Gate PowerTrench® MOSF...
Datasheet PDF File FDMS86201 PDF File

FDMS86201
FDMS86201

Overview
FDMS86201 N-Channel Shielded Gate PowerTrench® MOSFET October 2014 FDMS86201 N-Channel Shielded Gate PowerTrench® MOSFET 120 V, 49 A, 11.
5 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 11.
5 mΩ at VGS = 10 V, ID = 11.
6 A „ Max rDS(on) = 14.
5 mΩ at VGS = 6 V, ID = 10.
7 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application „ DC-DC Conversion Top Bottom Pin 1 S S D S S G S D S D D D D G D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 120 ±20 49 11.
6 160 264 104 2.
5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 1.
2 (Note 1a) 50 °C/W Device Marking FDMS86201 Device FDMS86201 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2010 Fairchild Semiconductor Corporation 1 FDMS86201 Rev.
C3 www.
fairchildsemi.
com FDMS86201 N-Channel Shielded Gate PowerTrench® MOSFET SS SF DS DF G SS SF DS DF G Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 120 ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficien...


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