isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
5V(Max) @IC= 3A ·High DC Current Gain
: hFE= 1000(Min) @ IC= 3A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC=25℃ PC
Collector Pow...