isc Silicon
NPN Power
Transistor
BUW133H
DESCRIPTION
·
High Switching Speed
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 430V
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in very fast switching applications in
inductive circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
VCES
Collector- Emitter Voltage (VBE= 0)
850
VCEO Collector-Emitter Voltage
430
UNIT V V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
20
A
IB
Base Current
10
A
IBM
Base Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
15
...