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BUW131H

INCHANGE
Part Number BUW131H
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 24, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 4...
Datasheet PDF File BUW131H PDF File

BUW131H
BUW131H

Overview
isc Silicon NPN Power Transistor DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX VCES Collector- Emitter Voltage (VBE= 0) 850 VCEO Collector-Emitter Voltage 450 UNIT V V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current 6 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.
0 ℃/W BUW131H · isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25...


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