Isc P-Channel MOSFET
Transistor
·FEATURES ·With TO-220 package ·Low input capacitance and gate charges ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications ·Load switch ·Power management
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-100
VGSS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
-5.
5
IDM
Drain Current-Single Pulsed
-22
PD
Total Dissipation @TC=25℃
40
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-...