isc P-Channel MOSFET
Transistor
AOD413A
FEATURES ·Drain Current –ID= -12A@ TC=25℃ ·Drain Source Voltage-
: VDSS=-40V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =11mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
-40
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
-12
A
IDM
Drain Current-Single Pluse
-30
A
PD
Total Dissipation @TC=25℃
50
W
TJ
Max.
Operating Junction Temperature -55~175 ℃
Tst...