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AOD410L

Alpha & Omega Semiconductors
Part Number AOD410L
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Jan 11, 2014
Detailed Description Rev3: Nov 2004 AOD410, AOD410L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description...
Datasheet PDF File AOD410L PDF File

AOD410L
AOD410L

Overview
Rev3: Nov 2004 AOD410, AOD410L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AOD410 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
AOD410L( Green Product ) is offered in a lead-free package.
Features VDS (V) = 30V ID = 8A RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 105mΩ (VGS = 4.
5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C B Maximum 30 ±20 8 6 20 8 10 25 12.
5 2.
1 1.
33 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche energy L=0.
1mH Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 20 46 5.
3 Max 30 60 7 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
Free Datasheet http://www.
datasheet4u.
com/ AOD410, AOD410L Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.
5V, ID=2A Forward Transconductance VDS=5V, ID=8A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250 µA, VGS=0V VDS=24V, V GS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250 µA VGS=4.
5V, VDS=5V VGS=10V, ID=8A TJ=125°C 1 10 48 76 75 6.
2 0.
75 1 4.
3 288 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 57 39 3 6.
72 VGS=10V, V DS=15V, ID=8A 3.
34 0.
76 1.
...


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