DatasheetsPDF.com

AOD4110

Alpha & Omega Semiconductors
Part Number AOD4110
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Jan 11, 2014
Detailed Description SRFET AOD4110 N-Channel Enhancement Mode Field Effect Transistor TM General Description The AOD4110 uses advanced tren...
Datasheet PDF File AOD4110 PDF File

AOD4110
AOD4110

Overview
SRFET AOD4110 N-Channel Enhancement Mode Field Effect Transistor TM General Description The AOD4110 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.
This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
Standard Product AOD4110 is Pb-free (meets ROHS & Sony 259 specifications).
Features VDS (V) = 30V ID =40A (VGS = 10V) RDS(ON) < 7.
2mΩ (VGS = 10V) RDS(ON) < 10.
5mΩ (VGS = 4.
5V) UIS Tested! Rg,Ciss,Coss,Crss Tested D TO-252 D-PAK Top View Drain Connected to Tab G S SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Continuous Drain CurrentA Avalanche Current C Repetitive avalanche energy L=0.
3mH C TC=25°C Power Dissipation Power Dissipation B C Maximum 30 ±20 40 40 180 22 18 25 94 63 31 6 4 -55 to 175 Units V V A TC=25°C G G TC=100°C TA=25°C TA=70°C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG A A mJ W W °C TC=100°C TA=25°C TA=70°C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 15 41 2 Max 20 50 2.
4 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com Free Datasheet http://www.
datasheet4u.
com/ AOD4110 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=30V, VGS=0V TJ=125°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A,VGS=0V Diode Forward Voltage G Maximum Body-Diode + Schottky Continuous Current TJ=125°C 1.
3 180 6 9.
0 8.
5 55 0.
37 0.
5 40 2154 VGS=0V, VDS=15V, f=...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)