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AOD4100

Alpha & Omega Semiconductors
Part Number AOD4100
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Jan 11, 2014
Detailed Description AOD4100 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4100 uses advanced trench technolo...
Datasheet PDF File AOD4100 PDF File

AOD4100
AOD4100

Overview
AOD4100 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4100 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.
This device is ideally suited for use as a High side switch in CPU core power conversion.
-RoHS Compliant -Halogen Free* Features VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) < 6.
5m Ω (VGS = 20V) RDS(ON) < 9m Ω (VGS = 12V) RDS(ON) < 12m Ω (VGS = 10V) 100% UIS Tested! 100% Rg Tested! TO-252 D-PAK Top View D Bottom View D G S S G S G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current C Avalanche Current C Maximum 25 ±30 50 49 120 28 118 50 25 6.
5 4.
2 -55 to 175 Units V V A A mJ W W °C Max 19 52 3 Units °C/W °C/W °C/W VGS TC=25°C G TC=100°C ID IDM IAR EAR PD PDSM Repetitive avalanche energy L=0.
3mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Case D Symbol RθJA RθJC Typ 16 43 2 Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com Free Datasheet http://www.
datasheet4u.
com/ AOD4100 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=20V, VGS=0V TJ=55°C VDS=0V, VGS= ±30V VDS=VGS ID=250µA VGS=12V, VDS=5V VGS=20V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=12V, ID=20A VGS=10V, ID=20A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V 2 120 5.
4 7.
5 7.
3 9.
8 43 0.
72 1 50 1100 VGS=0V, VDS=12.
5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 420 200 0.
8 20 VGS=10V, VDS=12.
5V, ID=20A 17 6.
5 6.
8 9.
5 VGS=10V, VDS=12.
5V, RL=0.
68Ω, RGEN=0.
6Ω IF=20A, dI/dt=100A/µs 13.
5 11.
5 5.
4 32 19 nC nC ns ns ns ns ns nC 1.
5 24 1350 6.
5 9 9 12 S V A pF p...


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