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AOD412

Alpha & Omega Semiconductors
Part Number AOD412
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Dec 20, 2006
Detailed Description www.DataSheet4U.com AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD412 uses advan...
Datasheet PDF File AOD412 PDF File

AOD412
AOD412

Overview
www.
DataSheet4U.
com AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance.
This device is ideally suited for use as a high side switch in CPU core power conversion.
Standard Product AOD412 is Pb-free (meets ROHS & Sony 259 specifications).
AOD412L is a Green Product ordering option.
AOD412 and AOD412L are electrically identical.
TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7.
0mΩ (VGS = 10V) RDS(ON) < 10.
5mΩ (VGS = 4.
5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.
1mH TC=25°C Power Dissipation B Power Dissipation A C Maximum 30 ±20 85 65 200 30 120 100 50 2.
5 1.
6 -55 to 175 Units V V A A mJ W W °C TC=25°C G TC=100°C B ID IDM IAR EAR PD PDSM TJ, TSTG TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 14.
2 39 0.
8 Max 20 50 1.
5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AOD412 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.
5V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250 µA, VGS=0V VDS=24V, V GS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250 µA VGS=10V, V DS=5V VGS=10V, ID=20A TJ=125°C 1.
5 85 5.
5 8.
8 8.
25 60 0.
72 1 85 1320...


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