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AOD4112

Alpha & Omega Semiconductors
Part Number AOD4112
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Jan 11, 2014
Detailed Description SRFET AOD4112 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFETTM The AOD4112 uses advan...
Datasheet PDF File AOD4112 PDF File

AOD4112
AOD4112

Overview
SRFET AOD4112 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFETTM The AOD4112 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS(ON),and low gate charge.
This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
Standard Product AOD4112 is Pb-free (meets ROHS & Sony 259 specifications).
Features VDS (V) = 30V ID = 20A (V GS = 10V) RDS(ON) < 9.
5m Ω (VGS = 10V) RDS(ON) < 14.
5m Ω (VGS = 4.
5V) UIS Tested! Rg,Ciss,Coss,Crss Tested! TO-252 D-PAK Top View Drain Connected to G Tab S G D S D Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current GF Pulsed Drain Current Avalanche Current C C C Maximum 30 ±20 20 20 80 25 94 50 25 5.
7 3.
6 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche energy L=0.
3mH Power Dissipation Power Dissipation B TC=100°C TA=25°C TA=70°C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case B Symbol A A t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 18 44 2.
4 Max 22 55 3 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com Free Datasheet http://www.
datasheet4u.
com/ AOD4112 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.
5V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current G Conditions ID=250uA, V GS=0V VDS=30V, V GS=0V TJ=125°C VDS=0V, VGS...


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