AM82731-003
RF & MICROWAVE
TRANSISTORS S-BAND RADAR APPLICATIONS
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REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 3.
0 W.
MIN.
WITH 5.
7 dB GAIN BANDWIDTH = 400 MHz
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400 x .
400 2NLFL (S042) hermetically sealed ORDER CODE AM 82731-003 BRANDING 82731-3
DESCRIPTION The AM82731-003 device is a medium power silicon bipolar
NPN transistor specifically designed for SBand radar pulsed driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 10:1 output VSWR.
Low R...