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AM82731-025

STMicroelectronics
Part Number AM82731-025
Manufacturer STMicroelectronics
Description RF & MICROWAVE TRANSISTORS
Published Mar 26, 2005
Detailed Description AM82731-025 . . . . . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS LOW PARASITIC, DOUBLE LEVEL METAL D...
Datasheet PDF File AM82731-025 PDF File

AM82731-025
AM82731-025

Overview
AM82731-025 .
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RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS LOW PARASITIC, DOUBLE LEVEL METAL DESIGN REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR @ 1 dB OVERDRIVE LOW RF THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 25 W MIN.
WITH 6.
2 dB GAIN .
400 x .
400 2LFL (S036) hermetically sealed ORDER CODE AM82731-025 BRANDING 82731-25 DESCRIPTION The AM82731-025 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 3:1 output VSWR with a +1dB input over drive.
Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).
The AM82731-025 is supplied in the Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications.
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit PIN CONNECTION 1.
Collector 2.
Base 3.
Emitter 4.
Base PDISS Ic VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 50°C) 100 4 46 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 2.
0 °C/W *Applies only to rated RF amplifier operation August 1992 1/4 AM82731-025 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Valu e Symbol Test Conditions Min.
Typ.
Max.
Unit BV CBO BV EBO BV CER ICES hFE IC = 15mA IE = 2mA IC = 15mA VCE = 0V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω VBE = 40V IC = 1.
5A 55 3.
5 55 — 30 — — — — — — — — 10 — V V V mA — DYNAMIC Valu e Symbol Test Conditions Min.
Typ.
Max.
Unit POUT ηc GPB Note: f = 2.
7 — 3.
1GHz f = 2.
7 — 3.
1GHz f...


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