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AM82731-006

STMicroelectronics
Part Number AM82731-006
Manufacturer STMicroelectronics
Description RF & MICROWAVE TRANSISTORS
Published Mar 26, 2005
Detailed Description AM82731-006 . . . . . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITT...
Datasheet PDF File AM82731-006 PDF File

AM82731-006
AM82731-006

Overview
AM82731-006 .
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RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 5.
5 W.
MIN.
WITH 5.
6 dB GAIN BANDWIDTH = 400 MHz .
400 x .
400 2NLFL (S042) hermetically sealed ORDER CODE AM 82731-006 BRANDING 82731-6 PIN CONNECTION DESCRIPTION The AM82731-006 device is a medium power silicon bipolar NPN transistor specifically designed for SBand radar pulsed driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 5:1 output VSWR.
Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques ensure high reliability and product consistency.
The AM82731-006 is supplied in the hermetic metal/ceramic package with internal input/output impedance matching circuitry, and is intended for military and other high reliability applications.
ABSOLUTE MAXIMUM RATINGS (T case = 25°C) Symbol Parameter Value Unit 1.
Collector 2.
Base 3.
Emitter 4.
Base PDISS Ic VCC TJ T STG Power Dissipation* Device Current* (TC ≤100°C) 40 1.
8 34 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 3.
75 °C/W *Applies only to rated RF amplifier operation August 1992 1/4 AM82731-006 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Value Symbol Test Conditions Min.
Typ.
Max.
Unit BV CBO BV EBO BV CER ICES hFE ICC = 5mA IE = 0mA IC = 0mA RBE = 10Ω IC = 500mA 50 3.
5 50 — 10 — — — — — — — — 4 — V V V mA — IE = 1mA IC = 5mA VCE = 30V VCE = 5V DYNAMIC Symbol Test Conditions Min.
Value Typ.
Max.
Unit POUT ηC GPB Note: f = 2.
7 — 3.
1GHz f = 2.
7 — 3.
1GHz f = 2.
7 — 3.
1GHz = = 100 µ S 10% PIN = 1.
5W PIN = 1.
5W PIN = 1.
5W VCC = 30V VCC = 30V VCC = 30V 5.
5 27 5.
6 6.
0...


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