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AM82731-003

STMicroelectronics
Part Number AM82731-003
Manufacturer STMicroelectronics
Description RF & MICROWAVE TRANSISTORS
Published Mar 26, 2005
Detailed Description AM82731-003 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITT...
Datasheet PDF File AM82731-003 PDF File

AM82731-003
AM82731-003

Overview
AM82731-003 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .
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REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 3.
0 W.
MIN.
WITH 5.
7 dB GAIN BANDWIDTH = 400 MHz .
400 x .
400 2NLFL (S042) hermetically sealed ORDER CODE AM 82731-003 BRANDING 82731-3 DESCRIPTION The AM82731-003 device is a medium power silicon bipolar NPN transistor specifically designed for SBand radar pulsed driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 10:1 output VSWR.
Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques ensure high reliability and product consistency.
The AM82731-003 is supplied in the hermetic metal/ceramic package with internal input/output impedance matching circuitry, and is intended for military and othe...


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