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AM82731-012

Part Number	AM82731-012
Manufacturer	STMicroelectronics
Description	RF & MICROWAVE TRANSISTORS
Published	Mar 26, 2005
Detailed Description	AM82731-012 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METAL...
Datasheet	AM82731-012 PDF File

Overview

AM82731-012 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .
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PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 12 W MIN.
WITH 6.
0 dB GAIN .
400 x .
400 2LFL (S036) hermetically sealed ORDER CODE BRANDING AM82731-012 82731-12 DESCRIPTION The AM82731-012 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.
This device is capable of operaion over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 3:1 output VSWR with a + 1 dB input overdrive.
Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).
The AM82731-012 is supplied in the Hermetic Metal/Ceramic package with internal Input/Output impedance matching sircuitry, and is...

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