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AM82731-050

STMicroelectronics
Part Number AM82731-050
Manufacturer STMicroelectronics
Description RF & MICROWAVE TRANSISTORS
Published Mar 26, 2005
Detailed Description AM82731-050 . . . . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER...
Datasheet PDF File AM82731-050 PDF File

AM82731-050
AM82731-050

Overview
AM82731-050 .
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RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 50 W MIN.
WITH 6 dB GAIN .
400 x .
400 2LFL (S036) hermetically sealed ORDER CODE AM82731-050 BRANDING 82731-50 DESCRIPTION The AM82731-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.
The device is capable of operation over a wde range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR with a +1 dB input overdrive.
Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The AM82731-050 is supplied in the AMPAC™ Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications.
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit PIN CONNECTION 1.
Collector 2.
Base 3.
Emitter 4.
Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 50°C) 167 8 46 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 1.
2 °C/W *Applies only to rated RF amplifier operation August 1992 1/4 AM82731-050 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Valu e Symbol Test Conditions Min.
Typ.
Max.
Unit BVCBO BVEBO BVCER ICES hFE IC = 25mA IE = 5mA IC = 25mA VCE = 40V VCE = 5V IE = 0mA IC = 0mA RBE = 10 Ω IC = 3A 55 3.
5 55 — 30 — — — — — — — — 20 — V V V mA — DYNAMIC Symbol Test Conditions Min.
Value Typ.
Max.
Unit POUT ηc GP Note: f = 2700 — 3100MHz f = 2700 — 3100MHz f = 2700 — 3100MHz = = 100 µ S 10% PIN = 12.
5W PIN = 12.
5W PIN = 12.
5W VCC ...


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