AM82731-025
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RF & MICROWAVE
TRANSISTORS S-BAND RADAR APPLICATIONS
LOW PARASITIC, DOUBLE LEVEL METAL DESIGN REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR @ 1 dB OVERDRIVE LOW RF THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 25 W MIN.
WITH 6.
2 dB GAIN
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400 x .
400 2LFL (S036) hermetically sealed ORDER CODE AM82731-025 BRANDING 82731-25
DESCRIPTION The AM82731-025 device is a high power silicon bipolar
NPN transistor specifically designed for S-Band radar pulsed output and driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can...