AM82731-050
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RF & MICROWAVE
TRANSISTORS S-BAND RADAR APPLICATIONS
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 50 W MIN.
WITH 6 dB GAIN
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400 x .
400 2LFL (S036) hermetically sealed ORDER CODE AM82731-050 BRANDING 82731-50
DESCRIPTION The AM82731-050 device is a high power silicon bipolar
NPN transistor specifically designed for SBand radar pulsed output and driver applications.
The device is capable of operation over a wde range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR with a +1 dB input ove...