Power
Transistors
2SC5913
Silicon
NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT Monitor
15.
5±0.
5
(10.
0)
Unit: mm
φ 3.
2±0.
1 5˚
(4.
5)
3.
0±0.
3 5˚
■ Features
• High breakdown voltage: VCBO ≥ 1 500 V • Wide safe operation area • Built-in dumper diode
26.
5±0.
5
(23.
4)
(2.
0)
5˚ (4.
0) 2.
0±0.
2 1.
1±0.
1 0.
7±0.
1 5.
45±0.
3 10.
9±0.
5
5.
5±0.
3
5˚ 5˚
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current * Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCES VEBO IB IC ...