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2SC5900

Inchange Semiconductor
Part Number 2SC5900
Manufacturer Inchange Semiconductor
Description Silicon NPN Transistor
Published Jun 24, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC5900 DESCRIPTION ·High Breakdown ...
Datasheet PDF File 2SC5900 PDF File

2SC5900
2SC5900

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC5900 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1700V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5V IC Collector Current- Continuous 8 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 3.
0 W 80 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC5900 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 1A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICES Collector Cutoff Current VCE= 1700V ; RBE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain IC=4.
5A ; VCE= 5V tstg Storage Time IC= 3A ;IB1=0.
5A; IB2= -1.
5A tf Fall Time IC= 3A ;IB1=0.
5A; IB2= -1.
5A 800 10 4 V 3.
0 V 1.
5 V 10 μA 1.
0 mA 10 mA 9 3.
0 μs 0.
2 μs isc website：www.
iscsemi.
cn 2 ...


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