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2SC5902

Panasonic Semiconductor
Part Number 2SC5902
Manufacturer Panasonic Semiconductor
Description NPN Transistor
Published Apr 3, 2005
Detailed Description Power Transistors 2SC5902 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV Unit: mm ■ Featu...
Datasheet PDF File 2SC5902 PDF File

2SC5902
2SC5902

Overview
Power Transistors 2SC5902 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV Unit: mm ■ Features 15.
5±0.
5 φ 3.
2±0.
1 5˚ 3.
0±0.
3 5˚ (4.
5) 26.
5±0.
5 (2.
0) (1.
2) (10.
0) (23.
4) 22.
0±0.
5 • High breakdown voltage: VCBO ≥ 1 700 V • Wide safe operation area • Built-in dumper diode 5˚ (4.
0) 5˚ 2.
0±0.
2 5˚ ■ Absolute Maximum Ratings TC = 25°C 1.
1±0.
1 0.
7±0.
1 / Parameter Symbol Rating Unit 18.
6±0.
5 (2.
0) Solder Dip 5.
45±0.
3 e Collector-base voltage (Emitter open) VCBO 1 700 V pe) Collector-emitter voltage (E-B short) VCES 1 700 V nc d ge.
ed ty Emitter-base voltage (Collector open) VEBO 7 3.
3±0.
3 (2.
0) 5.
5±0.
3 V sta tinu Base current IB 3 A a e cycle iscon Collector current IC 9 A life d, d Peak collector current * ICP 14 A n u duct type Collector power dissipation PC 40 W te tin Pro ed Ta=25°C 3 four ntinu Junction temperature Tj 150 °C ing isco Storage temperature Tstg −55 to +150 °C in n follow ned d Note) *: Non-repetitive peak collector current 10.
9±0.
5 5˚ 12 3 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package Internal Connection C B E Ma iscocontinueindteinncalnucdeestype, pla ■ Electrical Characteristics TC = 25°C ± 3°C /Dis ma Parameter Symbol Conditions D ance type, Emitter-base voltage (Collector open) ten ce Forward voltage Main tenan Collector-base cutoff current (Emitter open) d main Forward current transfer ratio (plane Collector-emitter saturation voltage VEBO VF ICBO hFE VCE(sat) IE = 500 mA, IC = 0 IF = 4.
5 A VCB = 1 000 V, IE = 0 VCB = 1 700 V, IE = 0 VCE = 5 V, IC = 4.
5 A IC = 4.
5 A, IB = 1.
13 A Min Typ Max Unit 7 V −2 V 50 µA 1 mA 5 10  3 V Base-emitter saturation voltage VBE(sat) IC = 4.
5 A, IB = 1.
13 A 1.
5 V Transition frequency fT VCE = 10 V, IC = 0.
1 A, f = 0.
5 MHz 3 MHz Storage time tstg IC = 4.
5 A, Resistance loaded 5.
0 µs Fall time tf IB1 = 1.
13 A, IB2 = −2.
25 A 0.
5 µs Note) Measuring methods are based on JAPANE...


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