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2SC5909

Panasonic Semiconductor
Part Number 2SC5909
Manufacturer Panasonic Semiconductor
Description NPN Transistor
Published Apr 3, 2005
Detailed Description Power Transistors 2SC5909 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ■ Features...
Datasheet PDF File 2SC5909 PDF File

2SC5909
2SC5909

Overview
Power Transistors 2SC5909 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ■ Features 15.
5±0.
5 φ 3.
2±0.
1 5˚ 3.
0±0.
3 5˚ (4.
5) 26.
5±0.
5 (2.
0) (1.
2) (10.
0) (23.
4) 22.
0±0.
5 • High breakdown voltage: VCBO ≥ 1 500 V • High-speed switching: tf < 200 ns • Wide safe operation area 5˚ (4.
0) 5˚ 2.
0±0.
2 5˚ ■ Absolute Maximum Ratings TC = 25°C 1.
1±0.
1 0.
7±0.
1 / Parameter Symbol Rating Unit 18.
6±0.
5 (2.
0) Solder Dip 5.
45±0.
3 e Collector-base voltage (Emitter open) VCBO 1 500 V pe) Collector-emitter voltage (E-B short) VCES 1 500 V nc d ge.
ed ty Collector-emitter voltage (Base open) VCEO 600 3.
3±0.
3 (2.
0) 5.
5±0.
3 V sta tinu Emitter-base voltage (Collector open) VEBO 7 V a e cycle iscon Base current IB 5 A life , d Collector current n u duct typed Peak collector current * IC 15 A ICP 25 A te tin Pro ed Collector power dissipation PC 50 W four ntinu Ta = 25°C 3 ing isco Junction temperature Tj 150 °C in n follow ed d Storage temperature Tstg −55 to +150 °C es plan Note) *: Non-repetitive peak collector current 10.
9±0.
5 5˚ 12 3 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package Internal Connection C B E Ma iscocontinueindteinncalnucde type, ■ Electrical Characteristics TC = 25°C ± 3°C /Dis ma Parameter Symbol Conditions D ance type, Collector-base cutoff current (Emitter open) Maintentenance Emitter-base cutoff current (Collector open) ain Forward current transfer ratio d m Collector-emitter saturation voltage (plane Base-emitter saturation voltage ICBO IEBO hFE VCE(sat) VBE(sat) VCB = 1 000 V, IE = 0 VCB = 1 500 V, IE = 0 VEB = 7 V, IC = 0 VCE = 5 V, IC = 7.
5 A IC = 7.
5 A, IB = 1.
88 A IC = 7.
5 A, IB = 1.
88 A Min Typ Max Unit 50 µA 1 mA 50 µA 5 10  2.
5 V 1.
5 V Transition frequency fT VCE = 10 V, IC = 0.
1 A, f = 0.
5 MHz 3 MHz Storage time tstg IC = 7.
5 A, Resistance loaded 2.
7 µs Fall time tf IB1 = 1.
88 A, IB2 = −3.
75 A 0.
2 µs Note) Measu...


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