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2SC5912

Panasonic Semiconductor
Part Number 2SC5912
Manufacturer Panasonic Semiconductor
Description Silicon NPN triple diffusion mesa type Power Transistor
Published Oct 20, 2006
Detailed Description www.DataSheet4U.com Power Transistors 2SC5912 Silicon NPN triple diffusion mesa type Horizontal deflection output for ...
Datasheet PDF File 2SC5912 PDF File

2SC5912
2SC5912

Overview
www.
DataSheet4U.
com Power Transistors 2SC5912 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV 15.
5±0.
5 (10.
0) Unit: mm φ 3.
2±0.
1 5˚ (4.
5) 3.
0±0.
3 5˚ ■ Features • High breakdown voltage: VCBO ≥ 1 500 V • Wide safe operation area • Built-in dumper diode 26.
5±0.
5 (23.
4) (2.
0) 5˚ (4.
0) 2.
0±0.
2 1.
1±0.
1 0.
7±0.
1 5.
45±0.
3 10.
9±0.
5 5.
5±0.
3 5˚ 5˚ ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current * Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCES VEBO IB IC ICP PC Rating 1 500 1 500 7 3 10 15 40 3 150 −55 to +150 °C °C Unit V V V A A A W 3.
3±0.
3 18.
6±0.
5 (2.
0) Solder Dip 5˚ 1 2 3 (2.
0) 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package Internal Connection C B E Note) *: Non-repetitive peak collector current ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Emitter-base voltage (Collector open) Forward voltage Collector-base cutoff current (Emitter open) Symbol VEBO VF ICBO hFE VCE(sat) VBE(sat) fT tstg tf IF = 5 A VCB = 1 000 V, IE = 0 VCB = 1 500 V, IE = 0 Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Storage time Fall time VCE = 5 V, IC = 5 A IC = 5 A, IB = 1.
25 A IC = 5 A, IB = 1.
25 A VCE = 10 V, IC = 0.
1 A, f = 0.
5 MHz IC = 5 A, Resistance loaded IB1 = 1.
25 A, IB2 = −2.
5 A 3 5.
0 0.
5 5 Conditions IE = 500 mA, IC = 0 Min 7 −2 50 1 10 2.
5 1.
5 Typ Max Unit V V µA mA  V V MHz µs µs Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
22.
0±0.
5 (1.
2) Publication date: March 2004 SJD00308AED 1 DataSheet 4 U .
com www.
DataSheet4U.
com 2SC5912 PC  Ta 80 70 60 50 40 (1) 30 20 10 (3) 0 0 25 50 75 100 125 150 10−3 1 10 100 1 000 Safe operation area 100 ICP 10 IC DC 1...


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