DatasheetsPDF.com

2SC5907

Renesas
Part Number 2SC5907
Manufacturer Renesas
Description Silicon NPN Epitaxial Type Transistor
Published May 30, 2014
Detailed Description 2SC5907 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1603 (Z) Rev.0 Oct. 2002 Features • Super compact pac...
Datasheet PDF File 2SC5907 PDF File

2SC5907
2SC5907


Overview
2SC5907 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1603 (Z) Rev.
0 Oct.
2002 Features • Super compact package: MFPAK (1.
4 x 0.
8 x 0.
59 mm) Outline MFPAK 3 1 2 1.
Emitter 2.
Base 3.
Collector Note: Marking is “WK–“.
http://www.
Datasheet4U.
com 2SC5907 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature VCBO 15 VCEO 4.
0 VEBO 1.
5 IC 80 PC 80 Tj Tstg 150 –55 to 150 Ratings Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Reverse transfer capacitance Collector output capacitance Gain bandwidth product Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE 120 Cre Cob fT(1) 5.
0 fT(2) PG NF  15.
0 11.
0  1.
2 14.
0  0.
45  0.
85 7.
5 Min 15    Typ   0.
1  1.
0  0.
5 140 170  pF 1.
0  GHz  GHz  1.
8 dB dB PF Max Unit Test V µA V µA V µA V  conditions IC = 10 µA, IE = 0 CB CE EB = 15 V, IE = 0 = 3.
5 V, RBE = Infinite = 0.
8 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, Emitter ground, f = 1 MHz VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 5 mA f = 1 GHz VCE = 1 V, IC = 40 mA f = 1 GHz VCE = 1 V, IC = 5 mA, f = 900 MHz VCE = 1 V, IC = 5 mA, f = 900 MHz Rev.
0, Oct.
2002, page 2 of 19 2SC5907 Collector Power Dissipation Curve Collector Power Dissipation PC (mW) Typical Output Characteristics 50 Collector Current IC (mA) 100 310 µA 80 60 40 30 210 µA 40 20 110 µA 20 10 IB = 10 µA 0 50 100 150 200 250 0 Ambient Temperature Ta (°C) 1 23 4 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics 50 IC (mA) 200 VCE = 1 V hFE DC Current Transfer Ratio vs.
Collector Current VCE = 1 V 40 Collector Current 30 DC Current Transfer Ratio 100 20 10 0 0.
2 0.
4 0.
6 0.
8 1.
0 Base to Emitter...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)