Power
Transistors
2SD1257, 2SD1257A
Silicon
NPN epitaxial planar type
For power switching Complementary to 2SB934
10.
0±0.
3
8.
5±0.
2 6.
0±0.
5 3.
4±0.
3
Unit: mm
1.
0±0.
1
s Features
q q q q
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
(TC=25˚C)
Ratings 130 150 80 100 7 15 7 40 1.
3 150 –55 to +150 Unit V
1.
5±0.
1
1.
5max.
1.
1max.
10.
5min.
2.
0
0.
8±0.
1
0.
5max.
2.
54±0.
3 5.
08±0.
5 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1257 2SD12...