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2SD1252A

Panasonic Semiconductor
Part Number 2SD1252A
Manufacturer Panasonic Semiconductor
Description Silicon NPN epitaxial planar type Power Transistor
Published Apr 3, 2005
Detailed Description Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type For power amplification Complementary to...
Datasheet PDF File 2SD1252A PDF File

2SD1252A
2SD1252A

Overview
Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB929 and 2SB929A s Features q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to 2SD1252 base voltage 2SD1252A VCBO 60 80 V Collector to 2SD1252 emitter voltage 2SD1252A VCEO 60 80 V Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VEBO ICP IC PC 6 5 3 35 1.
3 V A A W Junction temperature Storage temperature Tj 150 ˚C Tstg –55 to +150 ˚C s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions Collector cutoff 2SD1252 current 2SD1252A Collector cutoff 2SD1252 current 2SD1...


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