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2SD1251A

Kexin
Part Number 2SD1251A
Manufacturer Kexin
Description Silicon NPN Transistor
Published Nov 4, 2013
Detailed Description SMD Type Transistors Silicon NPN Triple Diffusion Junction Type 2SD1251,2SD1251A TO-252 +0.15 1.50 -0.15 Unit: mm 2.3...
Datasheet PDF File 2SD1251A PDF File

2SD1251A
2SD1251A

Overview
SMD Type Transistors Silicon NPN Triple Diffusion Junction Type 2SD1251,2SD1251A TO-252 +0.
15 1.
50 -0.
15 Unit: mm 2.
30 +0.
8 0.
50-0.
7 +0.
1 -0.
1 Features Wide area of safe operation.
6.
50 +0.
2 5.
30-0.
2 +0.
15 -0.
15 +0.
2 9.
70 -0.
2 +0.
1 0.
80-0.
1 +0.
15 0.
50 -0.
15 0.
127 max 2.
3 +0.
15 4.
60-0.
15 +0.
1 0.
60-0.
1 +0.
28 1.
50 -0.
1 +0.
25 2.
65 -0.
1 +0.
15 5.
55 -0.
15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SD1251 2SD1251A Collector-emitter voltage 2SD1251 2SD1251A Emitter-base voltage Collector current Peak collector current Base current Collector power dissipation Ta = 25 Tc = 25 Junction temperature Storage temperature Tj Tstg VEBO IC ICP IB PC VCEO Symbol VCBO Rating 60 80 60 80 8 4 6 1 1.
3 30 150 -55 to +150 Unit V V V V V A A A W W 3 .
8 0 www.
kexin.
com.
cn 1 Free Datasheet http://www.
datasheet4u.
com/ SMD Type 2SD1251,2SD1251A Electrical Characteristics Ta = 25 Parameter Collector-base cutoff current Emitter-base cutoff current Collector to emitter voltage 2SD1251 2SD1251A Forward current transfer ratio Forward current transfer ratio Base-emitter voltage Collector-emitter saturation voltage Transition frequency VBE hFE VCE = 3 V, IC = 1 A VCE = 3 V, IC = 0.
1 A VCE = 3 V, IC = 1 A Symbol ICBO IEBO Testconditons VCB = 20 V, IE = 0 VEB = 8 V, IC = 0 Transistors Min Typ Max 30 1 Unit ìA mA VCEO(sus) IC = 0.
25 A, L = 25 mH 60 80 30 40 1.
2 1 1 V V MHz 160 VCE(sat) IC = 2 A, IB = 0.
4 A fT VCE = 10 V, IC = 0.
2 A, f = 0.
5 MHz hFE Classification Rank hFE Q 30 60 P 50 100 O 80 160 2 www.
kexin.
com.
cn Free Datasheet http://www.
datasheet4u.
com/ ...


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