Low VCE(sat)
transistor (strobe flash)
2SD2118
zFeatures
1) Low VCE(sat).
VCE(sat) = 0.
25V (Typ.
) (IC/IB = 4A / 0.
1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SB1412.
zDimensions (Unit : mm)
2SD2118
zStructure Epitaxial planar type
NPN silicon
transistor
ROHM : CPT3 EIAJ : SC-63
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
50
Collector-emitter voltage
VCEO
20
Emitter-base voltage
VEBO
6
Collector current
IC 5 ICP 10
Collector power
dissipation
2SD2118
Junction temperature
PC Tj
1 10 150
Storage temperature
Tstg
−55 to +150
∗1 Single pulse Pw=10ms
Unit V V V
A(DC) A(Pulse) ∗1
W W(Tc=25°C)
°C °C
...