2SD2130
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (Darlington power
transistor)
2SD2130
Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Unit: mm
· High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.
5 V (max) (IC = 3 A, IB = 10 mA) · Zener diode included between collector and base.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
Rating...