Built-in Avalanche Diode for Surge Absorbing Darlington
Equivalent circuit C
2SD2141 B (1.
5kΩ)(100Ω) E
Silicon
NPN Triple Diffused Planar
Transistor
Application : Ignitor, Driver for Solenoid and Motor, and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
380±50
V
VCEO
380±50
V
VEBO
6
V
IC
6(Pulse10)
A
IB
1
A
PC
35(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB
Conditions VCB=330V
VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA VCE=12V, IE=–0.
5A VCB=10V, f=1MHz
(Ta=25°C)
Ratings
Unit
10max
µA
20max
mA
330 to 430
V
1500min 1.
5max 20typ 95typ
V MHz pF
Extern...