DATA SHEET
SILICON
TRANSISTOR
2SD2582
AUDIO FREQUENCY AMPLIFIER, SWITCHING
NPN SILICON EPITAXIAL
TRANSISTORS
FEATURES
• Low VCE(sat) VCE(sat) = 0.
15 V Max (@lC/lB = 0.
5 A/25 mA)
3.
8 ± 0.
2 (0.
149)
PACKAGE DIMENSIONS in millimeters (inches) 8.
5 MAX.
2.
8 MAX.
(0.
334 MAX.
) (0.
110 MAX.
) φ 3.
2 ± 0.
2 ( φ 0.
126)
• High DC Current Gain hFE = 150 to 600 (@VCE = 2.
0 V, lC = 0.
5 A)
Maximum Voltage and Current (TA = 25 °C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse)* Base Current (DC) * PW ≤ 10ms, Duty Cycle ≤ 10 % Maximum Power Dissipation Total Power Dissipation (TC = 25 °C) Total Power Dissipation (TA = 25 °C) Max...