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2SD2504

Panasonic Semiconductor
Part Number 2SD2504
Manufacturer Panasonic Semiconductor
Description Silicon NPN epitaxial planar type Transistor
Published Mar 26, 2010
Detailed Description Transistors 2SD2504 Silicon NPN epitaxial planar type For low-frequency power amplification www.DataSheet4U.com Unit:...
Datasheet PDF File 2SD2504 PDF File

2SD2504
2SD2504

Overview
Transistors 2SD2504 Silicon NPN epitaxial planar type For low-frequency power amplification www.
DataSheet4U.
com Unit: mm 5.
0±0.
2 4.
0±0.
2 0.
7±0.
1 0.
7±0.
2 12.
9±0.
5 • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current * Collector power dissipation Junction temperature Storage temperature Note) *: t = 380 µs Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 15 10 10 5 9 750 150 −55 to +150 Unit V V V A A mW °C °C 0.
45+0.
15 –0.
1 2.
5+0.
6 –0.
2 1 2 3 5.
1±0.
2 0.
45+0.
15 –0.
1 2.
5+0.
6 –0.
2 ■ Features 2.
3±0.
2 1 : Emitter 2 : Collector 3 : Base TO-92-B1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio * Collector-emitter saturation voltage * Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO ICBO ICEO IEBO hFE1 hFE2 VCE(sat) fT Cob Conditions IC = 1 mA, IE = 0 IC = 10 µA, IB = 0 VCB = 10 V, IE = 0 VCE = 5 V, IB = 0 VEB = 5 V, IE = 0 VCE = 2 V, IC = 0.
5 A VCE = 2 V, IC = 2 A IC = 3 A, IB = 0.
1 A VCB = 6 V, IE = −50 mA, f = 200 MHz VCB = 20 V, IE = 0, f = 1 MHz 300 195 0.
28 170 45 65 0.
50 V MHz pF Min 10 10 0.
1 1.
0 0.
1 800 Typ Max Unit V V µA µA µA  Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*: Pulse measurement Publication date: February 2003 SJC00267DED 1 2SD2504 PC  Ta 800 IC  VCE 4.
0 3.
5 Ta = 25°C IB = 10 mA 9 mA 8 mA 7 mA 2.
5 2.
0 1.
5 1.
0 0.
5 6 mA 5 mA 4 mA 3 mA 2 mA 1 mA 0 1.
2 www.
DataSheet4U.
com IC  VBE VCE = 2 V Collector power dissipation PC (mW) 1.
...


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