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2SD2524

Inchange Semiconductor
Part Number 2SD2524
Manufacturer Inchange Semiconductor
Description Power Transistor
Published Sep 22, 2009
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- ：VCBO= 1700V (Min) ·High Switching Speed ·Low Sat...
Datasheet PDF File 2SD2524 PDF File

2SD2524
2SD2524

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- ：VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 20 A IBM Base Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 5 A 100 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2524 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 2A ICBO Collector Cutoff Current VCB= 1000V; IE= 0 VCB= 1700V; IE= 0 hFE DC Current Gain IC= 6A; VCE= 5V VECF C-E Diode Forward Voltage IF= 8A fT Current-Gain—Bandwidth Product IC= 0.
1A; VCE= 10V Resistive Load ts Storage Time tf Fall Time IC= 6A, IB(end)= 2A, Lleak= 5μH 2SD2524 MIN TYP.
MAX UNIT 5 V 3.
0 V 1.
5 V 50 μA 1.
0 mA 4 10 2.
0 V 3 MHz 12 μs 0.
8 μs Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous e...


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