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2SD2525

Toshiba
Part Number 2SD2525
Manufacturer Toshiba
Description Silicon NPN Triple Diffused Type Transistor
Published Jun 12, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 2SD2525 Audio Frequency Power Amplifier Applications Unit...
Datasheet PDF File 2SD2525 PDF File

2SD2525
2SD2525


Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm • High DC current gain: 100 (min) • Low saturation voltage: VCE (sat) = 0.
4 V (typ.
) (IC = 2 A, IB = 0.
2 A) • Complementary to 2SB1640 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current DC IC 3 A Pulse ICP 6 Base current IB 0.
5 A Collector power dissipation Junction temperature Storage temperature range PC 1.
8 W Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA ― ― Note: Using continuously under heavy loads (e.
g.
the application of high TOSHIBA 2-10T1A temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the Weight: 1.
5 g (typ.
) reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2006-11-21 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT Cob VCB = 60 V, IE = 0 VEB = 7 V, IC = 0 IC = 50 mA, IB = 0 VCE = 5 V, IC = 0.
5 A VCE = 5 V, IC = 2 A IC = 2 A, IB = 0.
2 A VCE = 5 V, IC = 0.
5 A VCE = 5 V, IC = 0.
5 A VCB = 10 V, IE = 0, f = 1 MHz Marking 2SD2525 Min Typ.
Max Unit ― ― 10 μA ― ― 10 μA 60 ― ― V 100 ― 320 20 ― ― ― 0.
4 1.
0 V ― 0.
75 1.
0 V ― 3 ― MHz ― 35 ― pF D2525 P...



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