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2SD2526

Toshiba Semiconductor
Part Number 2SD2526
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description 2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2526 High Power Switching ...
Datasheet PDF File 2SD2526 PDF File

2SD2526
2SD2526

Overview
2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2526 High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm · High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) · Low saturation voltage: VCE (sat) = 1.
5 V (max) (IC = 3 A) · Complementary to 2SB1641 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 100 100 7 5 8 0.
5 1.
8 150 −55 to 150 Unit V V V A A W °C °C Equivalent Circuit BASE COLLECTOR ≈ 5 kΩ ≈ 150 Ω EMITTER JEDEC ― JEITA ― TOSHIBA 2-10T1A Weight: 1.
5 g (typ.
) 1 2003-02-04 2SD2526 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) (1) VCE (sat) (2) VBE (sat) VCB = 100 V, IE = 0 VEB = 6 V, IC = 0 IC = 30 mA, IB = 0 VCE = 3 V, IC = 3 A VCE = 3 V, IC = 5 A IC = 3 A, IB = 6 mA IC = 5 A, IB = 20 mA IC = 3 A, IB = 6 mA Min ― ― 100 2000 1000 ― ― ― Typ.
Max Unit ― 100 µA ― 2.
5 mA ―― V ― 15000 ―― 1.
1 1.
5 1.
3 2.
5 V 1.
7 2.
5 V Turn-on time ton 20 µs Input Output ― 1.
0 ― IB1 IB1 IB2 10 Ω Switching time Storage time tstg IB2 ― 4.
0 ― µs Fall time VCC = 30 V tf IB1 = −IB2 = 6 mA, duty cycle ≤ 1% ― 2.
5 ― Marking D2526 Product No.
Lot No.
Explanation of Lot No.
Month of manufacture (January to December are denoted by letters A to L respectively.
) Year of manufacture (Last decimal digit of the year of manufacture) 2 2003-02-04 Collector current IC (A) IC – VCE 53 Common 8 2 emitter Ta = 25°C 1.
5 61 0.
7 4 0.
5 2 IB = 0.
3 mA 0 0 0 2 4 6 8 10 Collector-emitte...


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