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2SD2527

Panasonic Semiconductor
Part Number 2SD2527
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description Power Transistors 2SD2527 Silicon NPN triple diffusion planar type For power amplification with high forward current tr...
Datasheet PDF File 2SD2527 PDF File

2SD2527
2SD2527

Overview
Power Transistors 2SD2527 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit: mm s Features q q q 9.
9±0.
3 3.
0±0.
5 4.
6±0.
2 2.
9±0.
2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 80 60 6 8 4 1 40 2.
0 150 –55 to +150 Unit V V V A A A W ˚C ˚C 15.
0±0.
5 φ3.
2±0.
1 13.
7±0.
2 4.
2±0.
2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 1.
4±0.
2 1.
6±0.
2 0.
8±0.
1 2.
54±0.
3 3 5.
08±0.
5 2.
6±0.
1 0.
55±0.
15 1 2 1:Base 2:Collector 3:Emitter TO–220D Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Storage time (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE fT tstg * Conditions VCB = 80V, IE = 0 VCE = 40V, IB = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.
8A IC = 3A, IB = 0.
075A VCE = 12V, IC = 0.
3A, f = 10MHz IC = 3A, IB1 = 0.
06A, IB2 = – 0.
06A, VCC = 50V min typ max 100 100 100 Unit µA µA µA V 60 500 2000 0.
7 30 20 VCE(sat) V MHz µs *h FE Rank classification Q P Rank hFE 500 to 1200 800 to 2000 1 Power Transistors IC — VCE 1.
6 TC=25˚C 1.
4 4 5 2SD2527 IC — VBE Collector to emitter saturation voltage VCE(sat) (V) 10 IC/IB=40 VCE(sat) — IC Collector current IC (A) 1.
2 1.
0 0.
8 0.
6 0.
4 0.
2 0 0 2 4 6 8 10 12 IB=1.
0mA 0.
9mA 0.
8mA 0.
7mA 0.
6mA 0.
5mA 0.
4mA 0.
3mA 0.
2mA 0.
1mA Collector current IC (A) 1 3 10–1 2 10–2 1 0 0 0.
2 0.
4 0.
6 0.
8 1.
0 1.
2 10–3 10–2 10–1 1 10 Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) C...


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