SI4800
N-channel TrenchMOS™ logic level FET
M3D315 Rev.
02 — 17 February 2004
Product data
1.
Product profile
1.
1 Description
N-channel enhancement mode field-effect
transistor in a plastic package using TrenchMOS™ technology.
1.
2 Features
s Low gate charge s Low on-state resistance
s Surface mounted package s Fast switching.
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3 Applications
s Portable appliances s Lithium-ion battery chargers
s Notebook computers s DC-to-DC converters.
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4 Quick reference data
s VDS ≤ 30 V s Ptot ≤ 2.
5 W
s ID ≤ 9 A s RDSon ≤ 18.
5 mΩ
2.
Pinning information
Table 1: Pin 1,2,3 4 5,6,7,8
Pinning - SOT96-1 (SO-8), simplified outline and symbol
Description
Simplified outline
source (s) gate (g)
85
d...