Part Number
|
IRF6609 |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Apr 16, 2005 |
Detailed Description
|
PD - 95822A
HEXFET® Power MOSFET
Low Conduction Losses l Low Switching Losses l Ideal Synchronous Rectifier MOSFET l Lo...
|
Datasheet
|
IRF6609
|
Overview
PD - 95822A
HEXFET® Power MOSFET
Low Conduction Losses l Low Switching Losses l Ideal Synchronous Rectifier MOSFET l Low Profile (0.
7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
l
IRF6609
Qg
46nC
VDSS
20V
RDS(on) max
2.
0mΩ@VGS = 10V 2.
6mΩ@VGS = 4.
5V
Applicable DirectFET Outline and Substrate Outline (see p.
8,9 for details) SQ SX ST MQ MX MT
MT
DirectFET ISOMETRIC
Description
The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.
7 mm profile.
The DirectFET package is compatible with e...
Similar Datasheet