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IRF6609

International Rectifier
Part Number IRF6609
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 95822A HEXFET® Power MOSFET Low Conduction Losses l Low Switching Losses l Ideal Synchronous Rectifier MOSFET l Lo...
Datasheet PDF File IRF6609 PDF File

IRF6609
IRF6609

Overview
PD - 95822A HEXFET® Power MOSFET Low Conduction Losses l Low Switching Losses l Ideal Synchronous Rectifier MOSFET l Low Profile (<0.
7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l IRF6609 Qg 46nC VDSS 20V RDS(on) max 2.
0mΩ@VGS = 10V 2.
6mΩ@VGS = 4.
5V Applicable DirectFET Outline and Substrate Outline (see p.
8,9 for details) SQ SX ST MQ MX MT MT DirectFET™ ISOMETRIC Description The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.
7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6609 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses.
The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies.
The IRF6609 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity.
The IRF6609 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C PD @TC = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Curre...


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