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IRF6601

International Rectifier
Part Number IRF6601
Manufacturer International Rectifier
Description DirectFET Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 94366C IRF6601 l l l l l l l Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Loss...
Datasheet PDF File IRF6601 PDF File

IRF6601
IRF6601

Overview
PD - 94366C IRF6601 l l l l l l l Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Low Profile (<0.
7 mm) Dual Sided Cooling Compatible Compatible with exisiting Surface Mount Techniques DirectFETTM Power MOSFET VDSS 20V RDS(on) max 3.
8mΩ@VGS = 10V 5.
0mΩ@VGS = 4.
5V ID 26A 21A Description DirectFET™ ISOMETRIC The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.
7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6601 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses.
The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies.
The IRF6601 has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity.
The IRF6601 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings Parameter VDS ID @ TC = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C PD @TC = 25°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max.
20 85 26 20 200 3.
6 2.
3 42 28 ±20 -55 to + 150 Unit...


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