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IRF6608

International Rectifier
Part Number IRF6608
Manufacturer International Rectifier
Description lHEXFET Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 94727B IRF6608 l l l l l l l Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Loss...
Datasheet PDF File IRF6608 PDF File

IRF6608
IRF6608

Overview
PD - 94727B IRF6608 l l l l l l l Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Low Profile (<0.
7 mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques HEXFET® Power MOSFET VDSS 30V RDS(on) max 9.
0mΩ@VGS = 10V 11mΩ@VGS = 4.
5V Qg 16nC ST Applicable DirectFET Outline and Substrate Outline (see p.
7, 8 for details) SQ SX ST MQ MX MT DirectFET™ ISOMETRIC Description The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.
7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dua...


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