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IRF6607

International Rectifier
Part Number IRF6607
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 94574B HEXFET® l l IRF6607 Power MOSFET Application Specific MOSFETs Ideal for CPU Core DC-DC Converters l Low C...
Datasheet PDF File IRF6607 PDF File

IRF6607
IRF6607

Overview
PD - 94574B HEXFET® l l IRF6607 Power MOSFET Application Specific MOSFETs Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.
7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques VDSS 30V 3.
3mΩ@VGS = 10V 4.
4mΩ@VGS = 4.
5V RDS(on) max Qg(typ.
) 50nC MT MX MT DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
9,10 for details) SQ SX ST MQ Description The IRF6607 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.
7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and process.
The DirectFET package allow...


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