Part Number
|
IRF6665 |
Manufacturer
|
International Rectifier |
Description
|
DIGITAL AUDIO MOSFET |
Published
|
Apr 16, 2005 |
Detailed Description
|
PD - 96900
DIGITAL AUDIO MOSFET
IRF6665
Key Parameters 100 53 8.7 1.9 V m: nC
Features
• Latest MOSFET Silicon technol...
|
Datasheet
|
IRF6665
|
Overview
PD - 96900
DIGITAL AUDIO MOSFET
IRF6665
Key Parameters 100 53 8.
7 1.
9 V m: nC
Features
• Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS(on) for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI • Low package stray inductance for reduced ringing and lower EMI • Can deliver up to 100W per channel into 8 Ω with no heatsink • Dual sided cooling compatible · Compatible with existing surface mount technologies · Lead and Bromide Free Applicable DirectFET Outline and Substrate Outline (see p.
6, 7 for details)
VDS
RDS(on) typ.
@ VGS = 10V Qg typ.
RG(int) typ.
SH
ST SH MQ M...
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