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MGF0910A

High-power GaAs FET

Description

High-power GaAs FET (small signal gain stage) MGF0910A L & S BAND /6W non - matched DESCRIPTION The MGF0910A, GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers. FEATURES • Class A operation • High output power P1dB=38.0dBm(T.Y.P) @f=2.3GHz • High power gain GLP=11.0dB(TYP.) @f=2.3GHz • High power added efficiency P.A.E=...

Mitsubishi

View MGF0910A Datasheet

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