MITSUBISHI SEMICONDUCTOR
MGF0912A
L & S BAND GaAs FET [ non – matched ]
DESCRIPTION
The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.
OUTLINE DRAWING
Unit : millimeters
FEATURES
• High output power Po=41. 5dBm(TYP. ) @f=1. 9GHz,Pin=33dBm • High power gain Gp=10. 5dB(TYP. ) @f=1. 9GHz • High power added efficiency ηadd=38%(TYP. ) @f=1. 9GHz,Pin=33dBm • Hermetic Package
‡A
ƒÓ2. 2
0. 6•}0. 2 ‡B
‡A
APPLICATION
• For L/S Band power amplifiers
QUALITY
• GG • Vds=10V • Ids=2. 6A • Rg=50Ω
9. 0•}0. 2
(Ta=25°C)
www. DataSheet4U. com
Absolute maximum ratings
Symbol
VGSO VGDO ID IGR IGF PT Tch Tstg
14. 0
0. 65
Delivery
Tray
1. 650. 1
RECOMMENDED BIAS CONDITIONS
5. 0
Parameter
Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature
Ratings
-15 -15 10 -30 63 53. 6 175 -65 to +175
Unit
V V A mA mA W °C °C
GF-7
(1) GATE (2) SOURCE (FLANGE) (3) DRAIN
Electrical characteristics
Symbol
IDSS VGS(off) gm Po ηadd GLP Rth(ch-c)
(Ta=25°C)
Parameter
Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Thermal Resistance *1
Test conditions
Min. VDS=3V,VGS=0V VDS=3V,ID=20mA VDS=3V,ID=2. 6A VDS=10V,ID=2. 6A,f=1. 9GHz Pin=33dBm VDS=10V,ID=2. 6A,f=1. 9GHz ∆Vf Method -2. 0 40. 5 9. 5 -
Limits
Typ. -3 41. 5 38 10. 5 2. 3 Max. 10 -5. 0 3
Unit
A V S dBm % dB °C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Mitsubishi Electric
June/2004
2MIN 4. 4+0/-0. 3 2MIN
‡@
1. 9•}0. 4
MGF0912A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs. Pi
45 40 Po (dBm) 35 30 25 20 GP(dB) 15 Gp 10 5 5 15 25 Pi (dBm) 35 10 0 PAE VD=10V ID(Rfoff)=2. 6A f=1. 9GHz Po 60 50 40 30 20 PAE (%)
S22 Ang(deg) 177. 56 176. 12 174. 92 173. 85 172. 81 171. 72 170. 52 169. 15 167. 56 165. 75 163. 68 161. 38 158. 86
80 70
IM3 vs. Pi
50 40 30 20 10 0 -10 5 Po(SCL) (dBm) f1=1. 90...
MGF0912A PDF File
