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MGF0910A

Part Number	MGF0910A
Manufacturer	Mitsubishi
Description	High-power GaAs FET
Published	Apr 29, 2005
Detailed Description	< High-power GaAs FET (small signal gain stage) > MGF0910A L & S BAND /6W non - matched DESCRIPTION The MGF0910A, GaAs ...
Datasheet	MGF0910A PDF File

Overview

< High-power GaAs FET (small signal gain stage) > MGF0910A L & S BAND /6W non - matched DESCRIPTION The MGF0910A, GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers.
FEATURES • Class A operation • High output power P1dB=38.
0dBm(T.
Y.
P) @f=2.
3GHz • High power gain GLP=11.
0dB(TYP.
) @f=2.
3GHz • High power added efficiency P.
A.
E=45%(TYP.
) @f=2.
3GHz,P1dB • Hermetically sealed metal-ceramic package with ceramic lid APPLICATION • For L & S band power amplifiers QUALITY • IG RECOMMENDED BIAS CONDITIONS • Vds=10V • Ids=1.
3A • Rg=100Ω Absolute maximum ratings (Ta=25°C) Symbol Parameter Ratings VGDO Gate to Source Voltage VGSO Gate to source voltage -15 -15 ID Drain Current 5 IGR Reverse gate current -15 IGF Forward gate current 31.
5 PT*1 Total power dissipation 30 Tch Cannel temperature 175 Tstg Storage temperature -65 to +175 *1:Tc=25°C Unit V V A mA mA W °C °C OUTLINE DRAWING Unit：millimeters 4 MIN 17.
5 ① 1...

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