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MGF0911A

Mitsubishi
Part Number MGF0911A
Manufacturer Mitsubishi
Description L / S BAND POWER GaAs FET
Published Apr 29, 2005
Detailed Description MITSUBISHI SEMICONDUCTOR 〈GaAs FET〉 MGF0911A L, S BAND POWER GaAs FET DESCRIPTION The MGF0911A, GaAs FET with an N-cha...
Datasheet PDF File MGF0911A PDF File

MGF0911A
MGF0911A

Overview
MITSUBISHI SEMICONDUCTOR 〈GaAs FET〉 MGF0911A L, S BAND POWER GaAs FET DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.
OUTLINE DRAWING 17.
5 1 Unit:millimeters FEATURES • Class A operation • High output power P1dB=41dBm(TYP) • High power gain GLP=11dB(TYP) • High power added efficiency ηadd=40%(TYP) @2.
3GHz,P1dB • Hermetically sealed metal-ceramic package with ceramic lid @2.
3GHz 2 1.
0 @2.
3GHz 2 3 2-R1.
25 14.
3 9.
4 APPLICATION UHF band power amplifiers QUALITY GRADE • IG 10.
0 RECOMMENDED BIAS CONDITIONS • VDS=10V • ID=2.
6A • Rg=50Ω • Refer to Bias Procedure 1 GATE 2 SOURCE(FLANGE) GF-21 3 DRAIN ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol VGDO VGSO ID IGR IGF PT Tch Tstg *1:TC=25˚C Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature Ratings -15 -15 10 30 63 37.
5 175 -65 to +175 *1 Unit V ...


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