MITSUBISHI SEMICONDUCTOR
MGF0917A
L & S BAND GaAs FET [ SMD non – matched ]
DESCRIPTION
The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
FEATURES
• High output power Po=24dBm(TYP. ) @f=1. 9GHz,Pin=4dBm • High power gain Gp=21dB(TYP. ) @f=1. 9GHz • High power added efficiency ηadd=38%(TYP. ) @f=1. 9GHz,Pin=4dBm • Hermetic Package
APPLICATION
• For UHF Band power amplifiers
Fig. 1
QUALITY
• GG
RECOMMENDED BIAS CONDITIONS
• Vds=10V • Ids=75mA • Rg=2kΩ
Delivery
-01:Tape & Reel(1K), -03:Trai(50pcs)
(Ta=25°C)
Absolute maximum ratings
www. DataSheet4U. com
Symbol
VGSO VGDO ID IGR IGF PT Tch Tstg
Parameter
Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature
Ratings
-15 -15 200 -0. 6 2. 5 2 175 -65 to +175 (Ta=25°C)
Unit
V V mA mA mA W °C °C
Electrical characteristics
Symbol
IDSS VGS(off) gm Po ηadd GLP NF ...
MGF0917A PDF File
