MITSUBISHI SEMICONDUCTOR
MGF0919A
L & S BAND GaAs FET [ SMD non – matched ]
DESCRIPTION
The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
FEATURES
• High output power Po=30dBm(TYP. ) @f=1. 9GHz,Pin=12dBm • High power gain Gp=19dB(TYP. ) @f=1. 9GHz • High power added efficiency ηadd=37%(TYP. ) @f=1. 9GHz,Pin=12dBm • Hermetic Package
APPLICATION
• For UHF Band power amplifiers
Fig. 1
QUALITY
• GG
RECOMMENDED BIAS CONDITIONS
• Vds=10V • Ids=300mA • Rg=500Ω
Delivery
-01:Tape & Reel(1K), -03:Trai(50pcs)
(Ta=25°C)
Absolute maximum ratings
Symbol
VGSO VGDO ID IGR IGF PT Tch Tstg
Parameter
Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature
Ratings
-15 -15 800 -2. 4 10 6 175 -65 to +175 (Ta=25°C)
Unit
V V mA mA mA W °C °C
Electrical characteristics
Symbol
IDSS VGS(off) gm Po ηadd GLP NF Rth(ch-c)
Parameter
Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Noise figure Thermal Resistance *1
Test conditions
Min. VDS=3V,VGS=0V VDS=3V,ID=2. 0mA VDS=3V,ID=300mA VDS=10V,ID=300mA,f=1. 9GHz Pin=12dBm VDS=10V,ID=300mA,f=1. 9GHz ∆Vf Method -1. 0 28 17 -
Limits
Typ. 600 260 30 37 19 1. 2 17 Max. 800 -5. 0 25
Unit
mA V mS dBm % dB dB °C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Mitsubishi Electric
June/2004
MGF0919A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs. Pin 35
Vds=10V Id(off)=300mA f=1. 9GHz
70
30
60
25
Po
50 Gp(dBm)PAE(%)
Po(dBm)
20
PAE
40
15
Gp
30
10
20
5
10
0 -10 -5 0 5 10 15 Pin(dBm)
0
Pi(SCL) vs. Po(SCL),IM3 40 35 30 25 20 15 10 5 0 -5 -10 -15 30 20 10 0 -10 -20 -30 -40 -50 -60 -70 5 10 15 20
Po(SCL)(dBm)
IM3
-10
-5
0
Pin(SCL)(dBm)
Mitsubishi Electric
IM3(dBc)
VD=10V ID=300mA f1=1. 90GHz f2=1. 91Ghz
Po
June/2004
MGF0919A
freq. (MHz) 600 1000 1400 1800 ...
MGF0919A PDF File
